On the use of front-end cascode rectifiers based on normally-on SiC JFET and Si MOSFET

@article{Vazquez2013OnTU,
  title={On the use of front-end cascode rectifiers based on normally-on SiC JFET and Si MOSFET},
  author={A. Vazquez and A. Rodriguez and M. Fernandez and M. M. Hernando and J. Sebastian},
  journal={2013 Twenty-Eighth Annual IEEE Applied Power Electronics Conference and Exposition (APEC)},
  year={2013},
  pages={1844-1851}
}
  • A. Vazquez, A. Rodriguez, +2 authors J. Sebastian
  • Published 2013 in
    2013 Twenty-Eighth Annual IEEE Applied Power…
The new wide band-gap semiconductor devices provide new properties to be explored. Normally-on Silicon Carbide (SiC) JFET power devices have several advantages, in particular low switching losses, high temperature operation and high reverse voltage capability. Looking for improve the overall efficiency in power converters, new structures based on these power devices might be studied. In this paper, a cascode rectifier based on normally-on SiC JFET is presented and analyzed. This new… CONTINUE READING