On the temperature sensitivity of 1.5-/spl mu/m GaInNAsSb lasers

@article{Bank2005OnTT,
  title={On the temperature sensitivity of 1.5-/spl mu/m GaInNAsSb lasers},
  author={S. K. Bank and L. L. Goddard and M. Wistey and H Yuen and J. S. Harris},
  journal={IEEE Journal of Selected Topics in Quantum Electronics},
  year={2005},
  volume={11},
  pages={1089-1098}
}
We analyze the temperature sensitivity of 1.5-/spl mu/m GaInNAsSb lasers grown on GaAs. Building on the method of Tansu and coworkers, we find evidence that the characteristic temperatures for the threshold current T/sub 0/ and external efficiency T/sub 1/ are balanced by a combination of monomolecular recombination and temperature destabilizing mechanism(s) near room temperature. At elevated temperatures, the destabilizing process(es) dominate, due to increased threshold current density J/sub… CONTINUE READING

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