On the scalability of source/drain current enhancement in thin film sSOI

@article{Augendre2005OnTS,
  title={On the scalability of source/drain current enhancement in thin film sSOI},
  author={E. Augendre and Geert Eneman and An De Keersgieter and Veerle Simons and Ingrid De Wolf and Ju{\'a}rez Ramos and S. Brus and B. Pawlak and Serap Seven and F. Leys and E. Sleeckx and S. Locorotondo and Monique Ercken and J.-F. de Marneffe and Liu Fei and Marla J Seacrist and Barbara Kellerman and M. Goodwin and Kristin De Meyer and M. Jurczak and S. Biesemans},
  journal={Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005.},
  year={2005},
  pages={301-304}
}
This paper demonstrates for the first time the scalability of source/drain current enhancement on low-doped thin film strained silicon on insulator (sSOI) substrate. Current improvement is maintained in narrow channel NFETs despite the relaxation from biaxial to uniaxial tensile strain after mesa patterning. Using strained contact etch-stop layers (sCESL), additional boost is achieved in short devices, resulting in 50% improvement in the drive current of 50 nm gate length devices with respect… CONTINUE READING
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