On the properties of conducting filament in ReRAM

@article{Lian2014OnTP,
  title={On the properties of conducting filament in ReRAM},
  author={Xiaojuan Lian and Mario Lanza and Alberto Rodriguez and Enrique Alfredo Miranda and Jordi Su{\~n}{\'e}},
  journal={2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)},
  year={2014},
  pages={1-4}
}
The conducting properties of resistive switching filaments in ReRAM are studied. Departing from first-principle simulations of electron transport along paths of oxygen vacancies in HfO2, the Quantum Point Contact model is reformulated in terms of a bundle of such vacancy paths. By doing this, the number of model parameters is reduced and a much clearer link between the microscopic structure of the conductive filament and its electrical properties can be provided. As an example, a simple… CONTINUE READING

References

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