On the properties of conducting filament in ReRAM

  title={On the properties of conducting filament in ReRAM},
  author={Xiaojuan Lian and Mario Lanza and Alberto Rodriguez and Enrique Alfredo Miranda and Jordi Su{\~n}{\'e}},
  journal={2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)},
The conducting properties of resistive switching filaments in ReRAM are studied. Departing from first-principle simulations of electron transport along paths of oxygen vacancies in HfO2, the Quantum Point Contact model is reformulated in terms of a bundle of such vacancy paths. By doing this, the number of model parameters is reduced and a much clearer link between the microscopic structure of the conductive filament and its electrical properties can be provided. As an example, a simple… CONTINUE READING


Publications referenced by this paper.


  • E. N. Bogachek, A. G. Scherbakov, U. Landman
  • Rev. B, vol. 56,
  • 1065

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