# On the possibility of a terahertz light emitting diode based on a dressed quantum well

@article{Mandal2019OnTP,
title={On the possibility of a terahertz light emitting diode based on a dressed quantum well},
author={S. Mandal and K{\'e}vin Dini and O. V. Kibis and Timothy C. H. Liew},
journal={Scientific Reports},
year={2019},
volume={9}
}
• Published 8 November 2019
• Physics
• Scientific Reports
We consider theoretically the realization of a tunable terahertz light emitting diode from a quantum well with dressed electrons placed in a highly doped p-n junction. In the considered system the strong resonant dressing field forms dynamic Stark gaps in the valence and conduction bands and the electric field inside the p-n junction makes the QW asymmetric. It is shown that the electrons transiting through the light induced Stark gaps in the conduction band emit photons with energy directly…
4 Citations
Terahertz spectroscopy of semiconductor microcavity lasers: Photon lasers
• Physics
Physical Review B
• 2021
Semiconductor microcavities can exhibit various macroscopic quantum phenomena, including Bose-Einstein condensation of polaritons, Bardeen-Cooper-Schrieffer (BCS) states of polaritons, and photon
Many-body effects and optical properties of single and double layer α-Τ3 lattices.
• Physics
Journal of physics. Condensed matter : an Institute of Physics journal
• 2020
The obtained dressed states due to mutual interaction between Dirac electrons and incident light are shown to demonstrate rather different electronic and optical properties in comparison with those in the absence of incident light.
Multistable excitonic Stark effect
• Physics
Physical Review Research
• 2022
The optical Stark effect is a tell-tale signature of coherent light-matter interaction in excitonic systems, wherein an irradiating light beam tunes exciton transition frequencies. Here we show that,
Many-Body Effects and Optical Properties of Single- and Double Layer $\alpha$-$\mathcal{T}_3$ Lattices
• Physics
• 2020
α-T3 Lattices Andrii Iurov1∗, Godfrey Gumbs, and Danhong Huang Department of Physics and Computer Science, Medgar Evers College of City University of New York, Brooklyn, NY 11225, USA Department of

## References

SHOWING 1-10 OF 34 REFERENCES
Semiconductor quantum well irradiated by a two-mode electromagnetic field as a terahertz emitter
• Physics
• 2018
We study theoretically the nonlinear optical properties of a semiconductor quantum well (QW) irradiated by a two-mode electromagnetic wave consisting of a strong resonant dressing field and a weak
Terahertz Lasing in Ensemble of Asymmetric Quantum Dots
• Physics
• 2017
We propose a scheme of terahertz laser based on an ensemble of asymmetric quantum dots dressed by an intense electromagnetic field. THz emission originates from the transitions at Rabi energy between
Observation of the intraexciton Autler-Townes effect in GaAs/AlGaAs semiconductor quantum wells.
• Physics
Physical review letters
• 2010
Clear evidence of the intraexcitonic Autler-Townes effect when the terahertz beam is tuned near the 1s-2p transition of the heavy-hole exciton is observed.
Terahertz lasing from intersubband polariton-polariton scattering in asymmetric quantum wells
• Physics
• 2013
Electric dipole transitions between different cavity polariton branches or between dressed atomic states with the same excitation number are strictly forbidden in centro-symmetric systems. For doped
Semiconductor quantum well excitons in strong, narrowband terahertz fields
• Physics
• 2013
Optical transitions between exciton states in semiconductors—intraexcitonic transitions—usually fall into the terahertz (THz) range and can be resonantly excited with narrowband, intense THz
Continuous terahertz emission from dipolaritons
• Physics
• 2013
We propose a scheme of continuous tunable THz emission based on dipolaritons --- mixtures of strongly interacting cavity photons and direct excitons, where the latter are coupled to indirect excitons
Terahertz emission from multiple-microcavity exciton-polariton lasers
• Physics
• 2014
Terahertz emission between exciton-polariton branches in semiconductor microcavities is expected to be strongly stimulated in the polariton laser regime, due to the high density of particles in the
Terahertz emission from ac Stark-split asymmetric intersubband transitions
• Physics
• 2014
Transitions between the two states of an AC Stark-split doublet are forbidden in centro-symmetric systems, and thus almost impossible to observe in experiments performed with atomic clouds. However,
Light-induced gaps in semiconductor band-to-band transitions.
• Physics
Physical review letters
• 2004
We observe a triplet around the third harmonic of the semiconductor band gap when exciting 50-100 nm thin GaAs films with 5 fs pulses at 3 x 10(12) W/cm(2). The comparison with solutions of the