On the origin of the redshift in the emission wavelength of InGaN/GaN blue light emitting diodes grown with a higher temperature interlayer

@inproceedings{Ju2012OnTO,
  title={On the origin of the redshift in the emission wavelength of InGaN/GaN blue light emitting diodes grown with a higher temperature interlayer},
  author={Z. G. Ju and Swee Tiam Tan and Zi-Hui Zhang and Yun Ji and Zabu Kyaw and Yilmaz Dikme and Xiao Wei Sun and Hilmi Volkan Demir},
  year={2012}
}
A redshift of the peak emission wavelength was observed in the blue light emitting diodes of InGaN/GaN grown with a higher temperature interlayer that was sandwiched between the low-temperature buffer layer and high-temperature unintentionally doped GaN layer. The effect of interlayer growth temperature on the emission wavelength was probed and studied by optical, structural, and electrical properties. Numerical studies on the effect of indium composition and quantum confinement Stark effect… CONTINUE READING

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