On the efficiency of Hall effect for intrinsic semiconductors

Abstract

The efficiency of generating the Hall electric field characterized by a material parameter, RH, called Hall coefficient. This depends on the type and concentration of the carrier, the scattering mechanism and even on the magnetic induction. This makes the analysis and optimisation of Hall devices very difficult. By conveniently choosing the material features and the operating conditions of Hall devices, the Hall coefficient can be expressed in a simplified way. This paper shows an easy method of determining the expression of the Hall coefficient for intrinsic semiconductors and it also emphasizes that this parameter varies according to the concentration ratio of two types of charge carriers, electrons and holes, for different materials.

4 Figures and Tables

Cite this paper

@article{Caruntu2009OnTE, title={On the efficiency of Hall effect for intrinsic semiconductors}, author={George Caruntu and Clara Panait}, journal={2009 IEEE International Workshop on Intelligent Data Acquisition and Advanced Computing Systems: Technology and Applications}, year={2009}, pages={323-326} }