On the defect generation and low voltage extrapolation of Q/sub BD/ in SiO/sub 2//HfO/sub 2/ stacks

@article{Degraeve2004OnTD,
  title={On the defect generation and low voltage extrapolation of Q/sub BD/ in SiO/sub 2//HfO/sub 2/ stacks},
  author={Robin Degraeve and Felice Crupi and D. H. Kwak and G. Groeseneken},
  journal={Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004.},
  year={2004},
  pages={140-141}
}
The purpose of this paper is to demonstrate that at least a part of the initially present traps is indistinguishable from the electrically generated traps favouring the first interpretation. With this interpretation, we observe on our stack a trap generation threshold below which no degradation occurs, resulting in a virtually infinite Q/sub BD/ at low voltage. This optimistic result is, however, countered by the fact that the pre-stress traps dominate I/sub G/ at low V/sub G/ and limit the… CONTINUE READING

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