On the charge control of the two-dimensional electron gas for analytic modeling of HEMTs

@article{Shey1988OnTC,
  title={On the charge control of the two-dimensional electron gas for analytic modeling of HEMTs},
  author={An-Jui Shey and W. H. Ku},
  journal={IEEE Electron Device Letters},
  year={1988},
  volume={9},
  pages={624-626}
}
A simple charge control model is developed for the two-dimensional electron gas (2-DEG) of high-electron-mobility transistors (HEMTs). This model explicitly takes into account the effective distance of the 2-DEG from the heterointerface and has been developed for use in analytic I-V and C-V modeling. In this model, the Fermi energy level versus the 2-DEG sheet carrier-concentration is represented by a simplified expression derived from the triangular potential well approximation and is shown to… CONTINUE READING

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