On the charge control of the two-dimensional electron gas for analytic modeling of HEMTs

@article{Shey1988OnTC,
title={On the charge control of the two-dimensional electron gas for analytic modeling of HEMTs},
author={An-Jui Shey and W. H. Ku},
journal={IEEE Electron Device Letters},
year={1988},
volume={9},
pages={624-626}
}

A simple charge control model is developed for the two-dimensional electron gas (2-DEG) of high-electron-mobility transistors (HEMTs). This model explicitly takes into account the effective distance of the 2-DEG from the heterointerface and has been developed for use in analytic I-V and C-V modeling. In this model, the Fermi energy level versus the 2-DEG sheet carrier-concentration is represented by a simplified expression derived from the triangular potential well approximation and is shown to… CONTINUE READING