On the benefit of aberration-corrected HAADF-STEM for strain determination and its application to tailoring ferroelectric domain patterns.

Abstract

Revealing strains on the unit-cell level is essential for understanding the particular performance of materials. Large-scale strain variations with a unit-cell resolution are important for studying ferroelectric materials since the spontaneous polarizations of such materials are strongly coupled with strains. Aberration-corrected high-angle-annular-dark… (More)
DOI: 10.1016/j.ultramic.2015.09.014

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Cite this paper

@article{Tang2016OnTB, title={On the benefit of aberration-corrected HAADF-STEM for strain determination and its application to tailoring ferroelectric domain patterns.}, author={Yaoliang L Tang and Y. L. Zhu and X. L. Ma}, journal={Ultramicroscopy}, year={2016}, volume={160}, pages={57-63} }