On the Universality of Inversion Layer Mobility in Si MOSFET's: Part I-Effects of Substrate Impurity Concentration


This paper reports the studies of the inversion layer mobility in nand p-channel Si MOSFET's with a wide range of substrate impurity concentrations to 10l8 cm-"). The validity and limitations of the universal relationship between the inversion layer mobility and the effective normal field (E,E) are examined. It is found that the universality of both the… (More)


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