On the Switching Parameter Variation of Metal Oxide RRAM—Part II: Model Corroboration and Device Design Strategy

Abstract

Using the model developed in Part I of this two-part paper, the simulated dc sweep and pulse transient characteristics of a metal oxide resistive random access memory cell are corroborated with the experimental data of HfOx memory. Key switching features such as the abrupt SET process, gradual RESET process, current fluctuation in the RESET process, and… (More)

8 Figures and Tables

Topics

Statistics

010202012201320142015201620172018
Citations per Year

73 Citations

Semantic Scholar estimates that this publication has 73 citations based on the available data.

See our FAQ for additional information.

  • Presentations referencing similar topics