On the Switching Parameter Variation of Metal Oxide RRAM—Part II: Model Corroboration and Device Design Strategy


Using the model developed in Part I of this two-part paper, the simulated dc sweep and pulse transient characteristics of a metal oxide resistive random access memory cell are corroborated with the experimental data of HfOx memory. Key switching features such as the abrupt SET process, gradual RESET process, current fluctuation in the RESET process, and… (More)

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