On the Reliability of Power GaAs FETs

Abstract

Accelerated life tests on power GaAs FETs have shown these devices to be reliable components. At operating temperatures of 125°C a MTTF of mid 106 hours is predicted. The activation energy of this process is 1.85ev with ¿n = 0.7. Failures are related to electromigration in the gate fingers. 

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