On the Polarity Dependence of Oxide Breakdown in MOS-Devices with N+ and P+ Polysilicon Gate

@article{Ogier1996OnTP,
  title={On the Polarity Dependence of Oxide Breakdown in MOS-Devices with N+ and P+ Polysilicon Gate},
  author={J.-L. Ogier and Robin Degraeve and Guido Groeseneken and H. E. Maes},
  journal={ESSDERC '96: Proceedings of the 26th European Solid State Device Research Conference},
  year={1996},
  pages={763-766}
}
In this paper the influence of polarity and polysilicon gate doping type on time-to- breakdown (t<inf>BD</inf>) and charge-to-breakdown (Q<inf>BD</inf>) is investigated. The anode hole injection model is used in order to describe the field dependence of t<inf>BD</inf> and Q<inf>BD</inf>. For n-type gate (positive and negative gate voltage) and p-type gate at positive gate voltage no significant difference is found: t<inf>BD</inf> and Q<inf>BD</inf> data can be well explained with the same model… CONTINUE READING
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