On the Performance Limits for Si MOSFET ' s : A Theoretical Study

  title={On the Performance Limits for Si MOSFET ' s : A Theoretical Study},
  author={F. Assad and Zhibin Ren and Dragica Vasileska and Supriyo Datta and Mark S. Lundstrom},
Performance limits of silicon MOSFETs are examined by a simple analytical theory augmented by self-consistent Schrödinger-Poisson simulations. The on-current, transconductance, and drain-to-source resistance in the ballistic limit (which corresponds to the channel length approaching zero) are examined. The ballistic transconductance in the limit t at the oxide thickness approaches zero is also examined. The results show that as the channel length approaches zero (which corresponds to the… CONTINUE READING
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