On the Operation Modes of Dual-Gate Reconfigurable Nanowire Transistors

  title={On the Operation Modes of Dual-Gate Reconfigurable Nanowire Transistors},
  author={Bin Sun and Benjamin Richstein and Patrick Liebisch and Thorben Frahm and Stefan Scholz and Jens Trommer and Thomas Mikolajick and Joachim Knoch},
  journal={IEEE Transactions on Electron Devices},
We investigate the operation modes of a dual-gate reconfigurable field-effect transistor (RFET). To this end, dual-gate silicon-nanowire FETs are fabricated based on anisotropic wet etching of silicon and nickel silicidation yielding silicide-nanowire Schottky junctions at source and drain. We compare the program gate at source (PGAS) with the more usual program gate at drain (PGAD) operation mode. While in PGAD mode, ambipolar operation is suppressed, switching is deteriorated due to the… 
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