On the Frequency Limits of SiGe HBTs for TeraHertz Applications

  title={On the Frequency Limits of SiGe HBTs for TeraHertz Applications},
  author={Jiahui Yuan and Ramkumar Krithivasan and J. D. Cressler and M. Khater and D. C. Ahlgren and A H Joseph},
  journal={2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting},
We report record f<sub>max</sub> for a silicon-based transistor, and the first combined set of f<sub>1</sub>+ f<sub>max</sub> above one-terahertz for silicon-germanium heterojunction bipolar transistors (SiGe HBTs). Peak f<sub>max</sub> of 618 GHz and f<sub>rfloor</sub> of 463 GHz at 4.5 K (chuck temperature) were measured for a scaled 0.12 times 2.5 mum-SiGe HBT (343 / 309 GHz at 300 K), at a breakdown voltage BV<sub>CEO</sub> of 1.62 V (1.70 at 300 K), yielding a record f<sub>T</sub> x BV<sub… CONTINUE READING


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