On the Frequency Limits of SiGe HBTs for TeraHertz Applications

@article{Yuan2007OnTF,
  title={On the Frequency Limits of SiGe HBTs for TeraHertz Applications},
  author={Jiahui Yuan and Ramkumar Krithivasan and J. D. Cressler and M. Khater and D. C. Ahlgren and A H Joseph},
  journal={2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting},
  year={2007},
  pages={22-25}
}
We report record f<sub>max</sub> for a silicon-based transistor, and the first combined set of f<sub>1</sub>+ f<sub>max</sub> above one-terahertz for silicon-germanium heterojunction bipolar transistors (SiGe HBTs). Peak f<sub>max</sub> of 618 GHz and f<sub>rfloor</sub> of 463 GHz at 4.5 K (chuck temperature) were measured for a scaled 0.12 times 2.5 mum-SiGe HBT (343 / 309 GHz at 300 K), at a breakdown voltage BV<sub>CEO</sub> of 1.62 V (1.70 at 300 K), yielding a record f<sub>T</sub> x BV<sub… CONTINUE READING

Citations

Publications citing this paper.
Showing 1-10 of 11 extracted citations

Multilayer and multidirectional linearly-tapered slot antenna for 300 GHz applications

Proceedings of the Fourth European Conference on Antennas and Propagation • 2010
View 11 Excerpts
Highly Influenced

SiGe HBT X-Band LNAs for Ultra-Low-Noise Cryogenic Receivers

IEEE Microwave and Wireless Components Letters • 2008
View 2 Excerpts

References

Publications referenced by this paper.

SiGe HBTs

J. D. Cressler, G. Niu
Artech House • 2003
View 2 Excerpts

Similar Papers

Loading similar papers…