On the Excess Noise Factors and Noise Parameter Equations for RF CMOS

@article{Cui2007OnTE,
  title={On the Excess Noise Factors and Noise Parameter Equations for RF CMOS},
  author={Yan Cui and Guofu Niu and Yibin Li and S. S. Taylor and Qingqing Liang and J. D. Cresslerz},
  journal={2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems},
  year={2007},
  pages={40-43}
}
This work examines the differences between the gd0 and gm referenced drain current excess noise factors in CMOS transistors as a function of channel length and bias. Using standard linear noisy two-port theory, we present a simple derivation of noise parameters. The results are compared with the well known Fukui's empirical FET noise equations. Experimental data on a 0.18 mum CMOS process are measured and used to evaluate the simple model equations 

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References

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Showing 1-4 of 4 references

The Design of CMOS Radio-Frequency Integrated Circuits

  • T H Lee
  • The Design of CMOS Radio-Frequency Integrated…
  • 2003

Noise in Solid-State Devices and Circuits

  • A Van Der, Ziel
  • Noise in Solid-State Devices and Circuits
  • 1986

IEEE Trans. MTT

  • H Fukui
  • IEEE Trans. MTT
  • 1981

A. Scholten Private communication

  • A. Scholten Private communication

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