On the «A Symmetrical» Behavior of Transient Enhanced Diffusion in Pre-Amorphised SI Wafers

@inproceedings{Alquier1998OnT,
  title={On the «A Symmetrical» Behavior of Transient Enhanced Diffusion in Pre-Amorphised SI Wafers},
  author={Daniel Alquier and Nick E. B. Cowern and Peter Pichler and C. Armand and A. Mart{\'i}nez and Daniel Mathiot and Mourad Omri and Alain Claverie},
  year={1998}
}
We have studied by SIMS the diffusion of boron in Ge-preamorphised silicon over a range of anneal temperatures and times, focusing on the influence of the depth of the boron profile relative to the crystalline-amorphous (c/a) interface. It is shown that, for all durations, transient enhanced diffusion (TED) occurs on both sides of the c/a interface. For short annealing times, the amplitude of TED varies by about two orders of magnitude between the surface and the end-of-range (EOR) defect band… CONTINUE READING