On-chip intercalated-graphene inductors for next-generation radio frequency electronics

@article{Kang2018OnchipII,
  title={On-chip intercalated-graphene inductors for next-generation radio frequency electronics},
  author={Jiahao Kang and Yuji Matsumoto and Xiang Li and Junkai Jiang and Xuejun Xie and Keisuke Kawamoto and Munehiro Kenmoku and Jae Hwan Chu and Wei Liu and Junfa Mao and Kazuyoshi Ueno and Kaustav Banerjee},
  journal={Nature Electronics},
  year={2018},
  volume={1},
  pages={46-51}
}
On-chip metal inductors that revolutionized radio frequency electronics in the 1990s suffer from an inherent limitation in their scalability in state-of-the-art radio frequency integrated circuits. This is because the inductance density values for conventional metal inductors, which result from magnetic inductance alone, are limited by the laws of electromagnetic induction. Here, we report inductors made of intercalated graphene that uniquely exploit the relatively large kinetic inductance and… 

Design of High Quality Factor Symmetrical Differential Inductor using Intercalated-Graphene

In this paper, the design of a novel symmetrical differential on-chip inductor using intercalated graphene (a 2D material) for next-generation radio-frequency-integrated-circuit (RFIC) applications

S- to X-Band Stretchable Inductors and Filters for Gigahertz Soft and Epidermal Electronics.

Here, stretchable inductors with a high quality factor of Q > 12.6 and resonance operation frequency of fres > 11.6 are demonstrated by combining microspirals with stretchable structures, overcoming all of the shortcomings of previous demonstrations.

Emergent electromagnetic induction in a helical-spin magnet.

The observed inductance is enhanced by nonlinearity in current and shows non-monotonous frequency dependence, both of which result from the current-driven dynamics of the spin-helix structures, and may pave the way to microscale, simple-shaped inductors based on emergent electromagnetism related to the quantum-mechanical Berry phase.

Demonstration of CMOS-Compatible Multi-Level Graphene Interconnects With Metal Vias

Doped-multilayer-graphene (DMLG) interconnects employing the subtractive-etching (SE) process have opened a new pathway for designing interconnects at advanced technology nodes, where conventional

Can Kinetic Inductance in Low-Dimensional Materials Enable a New Generation of RF-Electronics?

Kinetic Inductance has been recently exploited at room temperature to create materials with inductance densities that exceed the traditional Faraday limit [1], [2]. In this work, for the first time,

Designing Surface Chemistry of Silver Nanocrystals for Radio Frequency Circuit Applications.

This work chemically designed the surface and interface states of Ag NC thin films to achieve high stability, dc and ac conductivity, and minimized RF loss through stepwise ligand exchange, shell coating, and surface cleaning, and believes that this approach will lead to a cost-effective realization of RF circuits and devices in which sensing and wireless communication capabilities are combined for internet-of-things applications.

Bandwidth Limitation of Directly Contacted Graphene–Silicon Optoelectronics

Electrically contacting layered materials on a complementary metal-oxide-semiconductor transistor (CMOS)-processed lateral silicon homojunction offers a new platform enabling postfabrication-free

High-performance photonic transformers for DC voltage conversion

A detailed balance analysis is performed and it is shown that with a monolithically integrated design that enables efficient photon transport, the photonic transformer can operate with a near-unity conversion efficiency and high voltage conversion ratio.

Direct laser-patterned ultra-wideband antennae with carbon nanotubes

Ultra-wideband (UWB), a radio transmission technology with wide bandwidth exceeding the minimum of 500 MHz or at least 20% of the center frequency, is a revolutionary approach for short-range
...

References

SHOWING 1-10 OF 31 REFERENCES

Ultra-Small, High-Frequency, and Substrate-Immune Microtube Inductors Transformed from 2D to 3D

On-chip self-rolled-up 3D microtube inductors with extremely small footprint, unprecedented high frequency performance and weak dependence on substrate conductivity are reported.

High-Frequency Analysis of Carbon Nanotube Interconnects and Implications for On-Chip Inductor Design

This paper presents a rigorous investigation of high-frequency effects in carbon nanotube (CNT) interconnects and their implications for the design and performance analysis of high-quality on-chip

On-chip spiral inductors suspended over deep copper-lined cavities

A silicon micromachining method has been developed to fabricate on-chip high-performance suspended spiral inductors. The spiral structure of an inductor was formed with polysilicon and was suspended

High-Frequency Behavior of Graphene-Based Interconnects—Part II: Impedance Analysis and Implications for Inductor Design

This paper provides the first detailed insights into the ultrahigh-frequency behavior of graphene ribbons (GRs) and analyzes their consequences in designing interconnects and low-loss on-chip

High-frequency effects in carbon nanotube interconnects and implications for on-chip inductor design

This paper presents a rigorous investigation of high-frequency effects in carbon nanotube interconnects and their implications for the design and performance analysis of high-quality on-chip

Graphene inductors for high-frequency applications - design, fabrication, characterization, and study of skin effect

Graphene is very attractive for densely integrated and flexible high-frequency/RF IC applications due to its extraordinary electrical, thermal, and mechanical properties. This work presents the

Vertical Topologies of Miniature Multispiral Stacked Inductors

Vertical topologies of on-chip silicon miniature multispiral stacked inductors are addressed, which have been fabricated by a 0.18-mum CMOS process. A generalized topological circuit model is first

CMOS-compatible surface-micromachined suspended-spiral inductors for multi-GHz silicon RF ICs

Fully CMOS-compatible, highly suspended spiral inductors have been designed and fabricated on standard silicon substrates (1/spl sim/30 /spl Omega//spl middot/cm in resistivity) by surface

Miniature 3-D inductors in standard CMOS process

The structure of a miniature three-dimensional (3-D) inductor is presented in this paper. The proposed miniature 3-D inductors have been fabricated in a standard digital 0.35-/spl mu/m

Carbon Nanomaterials for Next-Generation Interconnects and Passives: Physics, Status, and Prospects

This paper reviews the current state of research in carbon-based nanomaterials, particularly the one-dimensional (1-D) forms, carbon nanotubes (CNTs) and graphene nanoribbons (GNRs), whose promising