On-chip integrated lasers in Al 2 O 3 : Er on silicon

Erbium-doped aluminum oxide channel waveguides were fabricated on silicon substrates and their characteristics were investigated for Er concentrations ranging from 0.27 to 4.2 × 10 cm. Background losses below 0.3 dB/cm at 1320 nm were measured. For optimum Er concentrations in the range of 1 to 2 × 10 cm, internal net gain was obtained over a wavelength… CONTINUE READING