On-The-Fly Interface Trap Measurement and Its Impact on the Understanding of NBTI Mechanism for p-MOSFETs with SiON Gate Dielectric

@article{Liu2007OnTheFlyIT,
  title={On-The-Fly Interface Trap Measurement and Its Impact on the Understanding of NBTI Mechanism for p-MOSFETs with SiON Gate Dielectric},
  author={W. J. Liu and Z. Y. Liu and Darning Huang and C. I. Liao and L. F. Zhang and Z. H. Gan and Waisum Wong and C. Shen and Ming-Fu Li},
  journal={2007 IEEE International Electron Devices Meeting},
  year={2007},
  pages={813-816}
}
For the first time, we developed an on-the-fly method OFIT to measure the interface trap density N<sub>IT</sub> without recovery during measurement. The OFIT produces the most reliable experimental data of the interface trap generation dynamics under stress and therefore provides a solid ground to check various modeling work. The slope n of t<sup>n</sup> time evolution of DeltaN<sub>IT</sub> under stress is temperature dependent, supporting dispersive Hydrogen transport in the oxide. Comparing… CONTINUE READING
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Temperature dIT

  • T. Yang
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