On Dealing With the Charge Trapped in Floating- Gate MOS (FGMOS) Transistors

@article{RodrguezVillegas2007OnDW,
  title={On Dealing With the Charge Trapped in Floating- Gate MOS (FGMOS) Transistors},
  author={Esther Rodr{\'i}guez-Villegas and Mariano Jim{\'e}nez-Fuentes and Ram{\'o}n Gonz{\'a}lez Carvajal},
  journal={IEEE Transactions on Circuits and Systems II: Express Briefs},
  year={2007},
  volume={54},
  pages={156-160}
}
This brief presents for the first time exhaustive experimental results of the only technique that has proven potential on eliminating residual trapped charge in floating gates without requiring any extra-circuitry or post-fabrication processing of the chip. The brief starts with a brief review of different techniques that have been used in the past to deal with the charge (sometimes to erase it, sometimes to program it) together with a description of the one used in the devices presented here… CONTINUE READING
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Solution to the trapped charge in FGMOS transistors

  • E. Rodriguez-Villegas, H. Barnes
  • Electron. Lett., vol. 39, no. 19, pp. 1416–1417…
  • 2003
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