On/off ratio tuning of Schottky Barrier CNTFETs based on quantum simulation approach


Carbon nanotube field effect transistor (CNTFET) is one of the novel nanoelectronic devices that overcome those MOSFETs limitations. In this paper we have studied the effect of scaling of Schottky Barrier CNTFET (SB_CNTFET) insulator thickness (tox), high k dielectric materials, Gate length (LG), L<sub>G</sub>/tox Ratio and Schottky Barrier height on… (More)


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