On/off ratio tuning of Schottky Barrier CNTFETs based on quantum simulation approach

Abstract

Carbon nanotube field effect transistor (CNTFET) is one of the novel nanoelectronic devices that overcome those MOSFETs limitations. In this paper we have studied the effect of scaling of Schottky Barrier CNTFET (SB_CNTFET) insulator thickness (tox), high k dielectric materials, Gate length (LG), L<sub>G</sub>/tox Ratio and Schottky Barrier height on… (More)

Topics

12 Figures and Tables

Slides referencing similar topics