Offcut-related step-flow and growth rate enhancement during (100) β-Ga2O3 homoepitaxy by metal-exchange catalyzed molecular beam epitaxy (MEXCAT-MBE)

@article{Mazzolini2020OffcutrelatedSA,
  title={Offcut-related step-flow and growth rate enhancement during (100) $\beta$-Ga2O3 homoepitaxy by metal-exchange catalyzed molecular beam epitaxy (MEXCAT-MBE)},
  author={Piero Mazzolini and Andreas Falkenstein and Zbigniew Galazka and Manfred Martin and Oliver Bierwagen},
  journal={arXiv: Materials Science},
  year={2020}
}
In this work we investigate the growth of $\beta$-Ga2O3 homoepitaxial layers on top of (100) oriented substrates via indium-assisted metal exchange catalyzed molecular beam epitaxy (MEXCAT-MBE) which have exhibited prohibitively low growth rates by non-catalyzed MBE in the past. We demonstrate that the proper tuning of the MEXCAT growth parameters and the choice of a proper substrate offcut allow for the deposition of thin films with high structural quality via step-flow growth mechanism at… 

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