Odd electron diffraction patterns in silicon nanowires and silicon thin films explained by microtwins and nanotwins

@article{Cayron2009OddED,
  title={Odd electron diffraction patterns in silicon nanowires and silicon thin films explained by microtwins and nanotwins},
  author={Cyril Cayron and Martien I. den Hertog and Laurence Latu-Romain and C{\'e}line Mouchet and Christophe Secouard and J.-L. Rouviere and Emmanuelle Rouvi{\`e}re and Jean-Pierre Simonato},
  journal={Journal of Applied Crystallography},
  year={2009},
  volume={42},
  pages={242 - 252}
}
Anomalous extra spots visible in electron diffraction patterns of silicon nanowires and silicon thin films are explained by the presence of micro- and nanotwins. 
View on PubMed
journals.iucr.org
79 Citations
Highly Influential Citations
1
Background Citations
9
Results Citations
1

79 Citations

Citation Type

Citation Type

Structure-sensitive principle in silicon nanowire growth
Natural occurrence of the diamond hexagonal structure in silicon nanowires grown by a plasma-assisted vapour-liquid-solid method.
TLDR
Transmission electron microscopy in the [12[combining macron]10] zone axis shows that the diamond hexagonal (P63/mmc) crystal structure is present in several nanowires, the first unambiguous proof of the natural occurrence of this metastable phase to the authors' knowledge.
Origin of polytype formation in VLS-grown Ge nanowires through defect generation and nanowire kinking.
TLDR
The faceting and atomic-scale defect structures of twinned 3C are compared with those of polytype nanowires to develop a common model linking nucleation pinning to nanowire morphology and phase to account for planar defect generation leading to kinked polytype Nanowires.
Propagating nanocavity-enhanced rapid crystallization of silicon thin films.
We demonstrate a mechanism of solid-phase crystallization (SPC) enabled by nanoscale cavities formed at the interface between an hydrogenated amorphous silicon film and embedded 30 to 40 nm Si…
Gold nanocluster distribution on faceted and kinked Si nanowires
Confined and guided catalytic growth of crystalline silicon films on a dielectric substrate
This paper presents the synthesis of epitaxial silicon (Si) nanoblades of controlled dimensions (thickness 50nm, width 200nm to 2μm) obtained by catalytic growth in a tunnel of confinement. The…
Confined VLS growth and structural characterization of silicon nanoribbons
TEM for Characterization of Nanowires and Nanorods
Transmission electron microscopy (TEM) and related techniques allow for imaging of nanomaterials to determine the material size, shape, composition, and crystal structure. In situ TEM measurements…
Epitaxial growth in heterogeneous nucleation of pure aluminum
Defect Formation in Ga-Catalyzed Silicon Nanowires
The synthesis of silicon nanowires by Ga-assisted plasma enhanced chemical vapor deposition (PECVD) has been recently demonstrated. In the present work, we study in detail the structural…
...
1
2
3
4
5
...

References

SHOWING 1-10 OF 89 REFERENCES
Additional X-ray and electron diffraction peaks of polycrystalline silicon films
Hexagonal germanium and high-resolution electron microscopy
Abstract The explosive crystallization of a thin film of amorphous germanium (a-Ge) is fascinating to observe with an electron microscope. It has been demonstrated through the use of crystal lattice…
Misleading fringes in TEM images and diffraction patterns of Si nanocrystallites
High‐resolution transmission electron microscopy (HRTEM) images and electron diffraction patterns of twinned Si nanocrystallites were recorded along various directions and analyzed in detail. We…
Hexagonal silicon formation by pulsed laser beam annealing
Formation of a hexagonal silicon phase after pulsed laser excitation
Abstract The formation, via pulsed laser excitation, from amorphous material of a new crystalline silicon phase with a hexagonal structure is described. The lattice image obtained by high-resolution…
Stable hexagonal-wurtzite silicon phase by laser ablation
A stable phase of relatively large hexagonal-wurtzite silicon crystals (up to 20 μm) was directly deposited at low pressure using ultraviolet laser ablation. The films were grown on a variety of…
Direct resolution of surface atomic steps by transmission electron microscopy
Abstract Long exposure dark-field micrographs have been imaged in weak but finite reflections from evaporated (III)-Au films normally considered forbidden on structure factor grounds. Contrast…
Phase modifications in polysilicon films with fibrous and dendritic structure
High‐resolution electron‐microscopy studies on laser‐annealed unsupported amorphous germanium films
The first results on high‐resolution electron‐microscope observations of unsupported amorphous germanium films, crystallized in situ by pulsed laser irradiation, are presented. They provide new…
Formation of hexagonal-wurtzite germanium by pulsed laser ablation
...
1
2
3
4
5
...