Obtaining uniform dopant distributions in VLS-grown Si nanowires.

@article{Koren2011ObtainingUD,
  title={Obtaining uniform dopant distributions in VLS-grown Si nanowires.},
  author={Elad Koren and Jerome K Hyun and Uri Givan and Eric R. Hemesath and Lincoln J. Lauhon and Yossi Rosenwaks},
  journal={Nano letters},
  year={2011},
  volume={11 1},
  pages={
          183-7
        }
}
Semiconducting nanowires grown by the vapor-liquid-solid method commonly develop nonuniform doping profiles both along the growth axis and radially due to unintentional surface doping and diffusion of the dopants from the nanowire surface to core during synthesis. We demonstrate two approaches to mitigate nonuniform doping in phosphorus-doped Si nanowires grown by the vapor-liquid-solid process. First, the growth conditions can be modified to suppress active surface doping. Second, thermal… CONTINUE READING
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