Observations of NBTI-induced atomic-scale defects

@article{Campbell2005ObservationsON,
  title={Observations of NBTI-induced atomic-scale defects},
  author={J. Campbell and P. M. Lenahan and A. Krishnan and Srikanth Krishnan},
  journal={IEEE Transactions on Device and Materials Reliability},
  year={2005},
  volume={6},
  pages={117-122}
}
A combination of MOSFET gate-controlled diode measurements and a very sensitive electron spin resonance technique called spin-dependent recombination was utilized to observe and identify defect centers generated by a negative bias temperature stress in fully processed SiO <sub>2</sub>-based pMOSFETs. In SiO<sub>2</sub> devices, the defects include two Si/SiO<sub>2</sub> interface silicon dangling bond centers (P<sub>b0</sub> and P<sub>b1</sub>) and may also include an oxide silicon dangling… CONTINUE READING
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