Observations of NBTI-induced atomic-scale defects

  title={Observations of NBTI-induced atomic-scale defects},
  author={J. Campbell and P. M. Lenahan and A. Krishnan and Srikanth Krishnan},
  journal={IEEE Transactions on Device and Materials Reliability},
A combination of MOSFET gate-controlled diode measurements and a very sensitive electron spin resonance technique called spin-dependent recombination was utilized to observe and identify defect centers generated by a negative bias temperature stress in fully processed SiO <sub>2</sub>-based pMOSFETs. In SiO<sub>2</sub> devices, the defects include two Si/SiO<sub>2</sub> interface silicon dangling bond centers (P<sub>b0</sub> and P<sub>b1</sub>) and may also include an oxide silicon dangling… CONTINUE READING
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Surface recombination in semiconductors

  • D. J. Fitzgerald, A. S. Grove
  • Surf Sci. 9, pp. 347-369
  • 1968
Highly Influential
5 Excerpts

Spin-dependent recombination on silicon surface

  • D. J. Lepine
  • Phys. Rev. B, 6, pp. 436-441
  • 1972
Highly Influential
6 Excerpts

Nitridation effects on Pb center structures at SiO2/Si (100) interfaces

  • Y. Miura, S. Fujieda
  • J. Appl. Phys. 95, pp. 4096-4101
  • 2004
Highly Influential
5 Excerpts

Interface defects responsible for negative-bias temperature instability in plasma-nitrided SiON/Si(100) systems" Appl

  • S. Fujieda, Y. Miura, M. Saitoh, E. Hasegawa, S. Koyama, K. Ando
  • Phys. Lett. 82, pp. 3677-3679
  • 2003
Highly Influential
5 Excerpts

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