Observation of voltage contrast in scanning ion microscopy of integrated circuits

@inproceedings{Kirk1987ObservationOV,
  title={Observation of voltage contrast in scanning ion microscopy of integrated circuits},
  author={E. C. G. Kirk and J. R. A. Cleaver and Haroon Ahmed},
  year={1987}
}
Strong voltage contrast effects have been observed in scanning ion microscopy of integrated circuits. The ion beam has also been used to cut microsections in integrated circuits, with precise control of position and depth. The voltage distributions in these sections can be observed.