Observation of strong spin-orbit interaction in 2DEG in an InAs heterostructure grown on GaAs substrate

@article{Katano2002ObservationOS,
  title={Observation of strong spin-orbit interaction in 2DEG in an InAs heterostructure grown on GaAs substrate},
  author={Yoshinori Katano and Maki Takahashi and S. Abe and Kanji Yoh},
  journal={International Conference on Molecular Bean Epitaxy},
  year={2002},
  pages={381-382}
}
Narrow-gap semiconductors such as InAs or InSb are known for their strong spin-orbit interactions. Therefore, heterostructure such as InAs/AlInAs is an attractive system for its potential applications to spin FETs. If the heterostructure is homoepitaxially grown on p-InAs substrate, the high crystal quality is expected and hence the high mobility and… CONTINUE READING