Observation of quantum-Hall effect in gated epitaxial graphene grown on SiC (0001)

  title={Observation of quantum-Hall effect in gated epitaxial graphene grown on SiC (0001)},
  author={T. Shen and J. Gu and M. Xu and Y. Wu and M. L. Bolen and M. Capano and L. Engel and P. Ye},
  journal={Applied Physics Letters},
  • T. Shen, J. Gu, +5 authors P. Ye
  • Published 2009
  • Physics
  • Applied Physics Letters
  • Epitaxial graphene films examined were formed on the Si-face of semi-insulating 4H-SiC substrates by a high temperature sublimation process. A high-k gate stack on the epitaxial graphene was realized by inserting a fully oxidized nanometer thin aluminum film as a seeding layer, followed by an atomic-layer deposition process. The electrical properties of epitaxial graphene films are retained after gate stack formation without significant degradation. At low temperatures, the quantum-Hall effect… CONTINUE READING

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    Publications referenced by this paper.
    Electronic Confinement and Coherence in Patterned Epitaxial Graphene
    • 4,331
    • Open Access
    Top-gated graphene field-effect-transistors formed by decomposition of SiC
    • 200
    • Open Access
    Field effect in epitaxial graphene on a silicon carbide substrate
    • 128
    • Open Access
    Electronic structure of epitaxial graphene layers on SiC: effect of the substrate.
    • 520
    • Open Access
    Electric Field Effect in Atomically Thin Carbon Films
    • 38,878
    • Open Access
    Substrate-induced bandgap opening in epitaxial graphene.
    • 794
    • Open Access