Observation of quantum-Hall effect in gated epitaxial graphene grown on SiC (0001)

@article{Shen2009ObservationOQ,
  title={Observation of quantum-Hall effect in gated epitaxial graphene grown on SiC (0001)},
  author={Tian Shen and J. J. Gu and Ming Xu and Y. Q. Wu and Michael L. Bolen and Michael A. Capano and L W Engel and Peide D. Ye},
  journal={Applied Physics Letters},
  year={2009},
  volume={95},
  pages={172105}
}
  • T. Shen, J. Gu, P. Ye
  • Published 26 August 2009
  • Physics, Materials Science
  • Applied Physics Letters
Epitaxial graphene films examined were formed on the Si-face of semi-insulating 4H-SiC substrates by a high temperature sublimation process. A high-k gate stack on the epitaxial graphene was realized by inserting a fully oxidized nanometer thin aluminum film as a seeding layer, followed by an atomic-layer deposition process. The electrical properties of epitaxial graphene films are retained after gate stack formation without significant degradation. At low temperatures, the quantum-Hall effect… 

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