Observation of highly reproducible resistive-switching behavior from solution-based ZnO nanorods.

Abstract

The authors report upon highly reproducible, unipolar resistive-switching random access memory with narrow voltage distributions using Au/ZnO nanorods/Au structures. The ZnO nanorods resistive switching layer was prepared by a simple spin-coating process on a sol-gel seed layer, and from its size confinement effect, this device showed narrow set/reset voltage distributions and low voltage operations compared with Au/ZnO thin film/Au structures. With this electrical uniformity, the device exhibited good reliabilities such as long retention (> 70000 sec) and high endurance (> 5000 cycles).

Cite this paper

@article{Song2013ObservationOH, title={Observation of highly reproducible resistive-switching behavior from solution-based ZnO nanorods.}, author={Min Yeong Song and Yujeong Seo and Soyun Park and Jae Hyuk Lee and Ho-Myoung An and Tae Geun Kim}, journal={Journal of nanoscience and nanotechnology}, year={2013}, volume={13 9}, pages={6212-5} }