Numerically Efficient Modeling of CNT Transistors With Ballistic and Nonballistic Effects for Circuit Simulation

@article{Kazmierski2010NumericallyEM,
  title={Numerically Efficient Modeling of CNT Transistors With Ballistic and Nonballistic Effects for Circuit Simulation},
  author={Tom J. Kazmierski and Dafeng Zhou and Bashir M. Al-Hashimi and Peter Ashburn},
  journal={IEEE Transactions on Nanotechnology},
  year={2010},
  volume={9},
  pages={99-107}
}
This paper presents an efficient carbon nanotube (CNT) transistor modeling technique that is based on cubic spline approximation of the nonequilibrium mobile charge density. The approximation facilitates the solution of the self-consistent voltage equation in a CNT so that calculation of the CNT drain-source current is accelerated by at least two orders of magnitude. A salient feature of the proposed technique is its ability to incorporate both ballistic and nonballistic transport effects… 

Noniterative Compact Modeling for Intrinsic Carbon-Nanotube FETs: Quantum Capacitance and Ballistic Transport

In this paper, an analytical model of intrinsic carbon-nanotube field-effect transistors is presented. The origins of the channel carriers are analyzed in the ballistic limit. A noniterative

Electron Back Scattering in CNTFETs

A new nonballistic analytical model for the intrinsic channel region of MOSFET-like single-walled carbon-nanotube FETs (CNTFETs) with ohmic contacts has been developed which overcomes the limitations

Compact model for ballistic single wall CNTFET under quantum capacitance limit

This paper proposes a compact model for carbon nanotube field effect transistor (CNTFET) based on surface potential and conduction band minima. The proposed model relates the I–V characteristics to

Analytical Drain Current Model of One-Dimensional Ballistic Schottky-Barrier Transistors

A new analytical model based on the WKB approximation for MOSFET-like one-dimensional ballistic transistors with Schottky-Barrier contacts has been developed for the drain current. By using a proper

Circuit-level modelling and simulation of carbon nanotube devices

TLDR
This research is focused on the electron transport characteristics of CNT transistors, with the aim to develop efficient techniques to model and simulate CNT devices for logic circuit analysis.

Analytical Drain Current Model of 1-D Ballistic Schottky-Barrier Transistors

A new analytical model based on the Wentzel–Kramers–Brillouin approximation for MOSFET-like 1-D ballistic transistors with Schottky-Barrier contacts has been developed for the drain current. By using

Schottky Barrier Carbon Nanotube Transistor: Compact Modeling, Scaling Study, and Circuit Design Applications

This paper presents a computationally efficient physics-based compact model for the Schottky barrier (SB) carbon nanotube field-effect transistor (CNTFET). This compact model includes a new

HSPICE implementation of a numerically efficient model of CNT transistor

TLDR
The algorithms of an implementation of a numerically efficient carbon nanotube transistor (CNT) model in HSPICE is presented, derived from cubic spline non-linear approximation of the non-equilibrium mobile charge density, which achieves superior accuracy while maintaining similar CPU time performance.
...

References

SHOWING 1-10 OF 33 REFERENCES

Efficient circuit-level modelling of ballistic CNT using piecewise non-linear approximation of mobile charge density

TLDR
A new carbon nanotube transistor (CNT) modelling technique which is based on an efficient numerical piece-wise non-linear approximation of the non-equilibrium mobile charge density, making it particularly suitable for implementation in circuit-level, eg.

A fast, numerical circuit-level model of carbon nanotube transistor

TLDR
The effective employment of numerical piece-wise approximation to the solution of the Fermi-Dirac integral is extended to accelerate the CNT model speed when evaluating the source-drain current while maintaining high modeling accuracy.

A circuit-compatible model of ballistic carbon nanotube field-effect transistors

TLDR
A novel method of circuit-compatible modeling of single-walled semiconducting CNFETs in their ultimate performance limit is presented, for the first time, both the I-V and the C-V characteristics of the device have been efficiently modeled for circuit simulations.

An Efficient and Symbolic Model for Charge Densities in Ballistic Carbon Nanotube FETs

This paper presents a piece-wise linear approximation for modeling charge densities in a Carbon Nanotube FET (CNTFET) in the ballistic regime; this permits a fast and accurate calculation of the

Theory of ballistic nanotransistors

Numerical simulations are used to guide the development of a simple analytical theory for ballistic field-effect transistors. When two-dimensional (2-D) electrostatic effects are small (and when the

Properties of short channel ballistic carbon nanotube transistors with ohmic contacts

TLDR
Self-consistent, non-equilibrium Green's function calculations of the characteristics of short channel carbon nanotube transistors, focusing on the regime of ballistic transport with ohmic contacts, show a temperature dependence even in the absence of phonon scattering or Schottky barriers.

A Circuit-Compatible SPICE model for Enhancement Mode Carbon Nanotube Field Effect Transistors

  • J. DengH. Wong
  • Physics
    2006 International Conference on Simulation of Semiconductor Processes and Devices
  • 2006
This paper presents a circuit-compatible compact model for short channel length (5 nm~100 nm), quasi-ballistic single wall carbon nanotube field-effect transistors (CNFETs). For the first time, a

Compact modeling of carbon nanotube transistor for early stage process-design exploration

  • A. BalijepalliS. SinhaYu Cao
  • Engineering
    Proceedings of the 2007 international symposium on Low power electronics and design (ISLPED '07)
  • 2007
TLDR
This work develops the first compact model of CNT, with the objective to explore the optimal process and design space for robust low-power applications, and significantly enhances the simulation efficiency to support large-scale design research.

High-frequency performance projections for ballistic carbon-nanotube transistors

A quasi-static approach is combined with a theory of ballistic nanotransistors to assess the high-frequency performance potential of carbon-nanotube field-effect transistors. A simple equivalent

Role of phonon scattering in carbon nanotube field-effect transistors

The role of phonon scattering in carbon nanotube field-effect transistors (CNTFETs) is explored by solving the Boltzmann transport equation using the Monte Carlo method. The results show that elastic