Numerical analysis of the propagation properties of subwavelength semiconductor slit in the terahertz region.

Abstract

The propagation properties of terahertz (THz) waves passing through heavily doped semiconductor slit have been numerically investigated by using the transfer matrix method. The effects of geometrical parameters, carrier concentration, and dielectric materials filling in the slit have been considered. The contour for carrier concentration and slit width show… (More)

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