Numerical Study on Optimization of Active Layer Structures for GaN/AlGaN Multiple-Quantum-Well Laser Diodes

@article{Chen2008NumericalSO,
  title={Numerical Study on Optimization of Active Layer Structures for GaN/AlGaN Multiple-Quantum-Well Laser Diodes},
  author={Jun-Rong Chen and Tsung-Shine Ko and P. Su and Tien Lu and Hao-Chung Kuo and Yen-Kuang Kuo and S. C. Wang},
  journal={Journal of Lightwave Technology},
  year={2008},
  volume={26},
  pages={3155-3165}
}
Theoretical analysis for different active layer structures is performed to minimize the laser threshold current of the ultraviolet GaN/AlGaN multiple-quantum-well laser diodes by using advanced device simulation. The simulation results show that the lower threshold current can be obtained when the number of quantum wells is two or three and the aluminum composition in the barrier layer is about 10%-12%. This result is attributed to several different effects including electron leakage current… CONTINUE READING
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