Numerical Simulation of Radiation Damage Effects in p-Type and n-Type FZ Silicon Detectors

@article{Petasecca2006NumericalSO,
  title={Numerical Simulation of Radiation Damage Effects in p-Type and n-Type FZ Silicon Detectors},
  author={Marco Petasecca and Frank A Moscatelli and Daniele Passeri and G. Pignatel},
  journal={IEEE Transactions on Nuclear Science},
  year={2006},
  volume={53},
  pages={2971-2976}
}
In the framework of the CERN-RD50 Collaboration, the adoption of p-type substrates has been proposed as a suitable mean to improve the radiation hardness of silicon detectors up to fluencies of 1times10 16 n/cm2. In this work two numerical simulation models will be presented for p-type and n-type silicon detectors, respectively. A comprehensive analysis of the variation of the effective doping concentration (Neff), the leakage current density and the charge collection efficiency as a function… CONTINUE READING
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