Numerical Modeling of Silicon Photodiodes for High-Accuracy Applications Part II. Interpreting Oxide-Bias Experiments

Abstract

The semiconductor device modeling program PC-1D and the programs that support its use in high-accuracy modeling of photodiodes, all of which were described in Part I of this series of papers, are used to simulate oxide-bias self-calibration experiments on three different types of silicon photodiodes. It is shown that these simulations can be used to… (More)
DOI: 10.6028/jres.096.024

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Cite this paper

@inproceedings{Geist1991NumericalMO, title={Numerical Modeling of Silicon Photodiodes for High-Accuracy Applications Part II. Interpreting Oxide-Bias Experiments}, author={Jon C. Geist and Rainer Koehler and Roland Goebel and Alexander M. Robinson and Carrie R James}, booktitle={Journal of research of the National Institute of Standards and Technology}, year={1991} }