Numerical Investigation on the Carrier Transport Characteristics of AlGaN Deep-UV Light-Emitting Diodes

@article{Kuo2016NumericalIO,
  title={Numerical Investigation on the Carrier Transport Characteristics of AlGaN Deep-UV Light-Emitting Diodes},
  author={Yen-Kuang Kuo and Jih-Yuan Chang and Fang-Ming Chen and Ya-Hsuan Shih and Hui-Tzu Chang},
  journal={IEEE Journal of Quantum Electronics},
  year={2016},
  volume={52},
  pages={1-5}
}
Carrier transport characteristics of AlGaN-based deep-ultraviolet light-emitting diodes (LEDs) are theoretically investigated. Simulation results reveal that hole transport/injection may be severely obstructed by the large potential barrier at the p-electron-blocking layer/p-GaN interface. Under this circumstance, the slope efficiency degrades and electron leakage increases accordingly. By inserting the AlGaN interlayers to form band-engineered staircase p-region, both the transport/injection… CONTINUE READING

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