Nucleation and growth of GaN nanowires on Si(111) performed by molecular beam epitaxy.

@article{Calarco2007NucleationAG,
  title={Nucleation and growth of GaN nanowires on Si(111) performed by molecular beam epitaxy.},
  author={Raffaella Calarco and Ralph J Meijers and Ratan K Debnath and T. F. Stoica and Eli Sutter and Hans L{\"u}th},
  journal={Nano letters},
  year={2007},
  volume={7 8},
  pages={2248-51}
}
GaN nanowires (NWs) have been grown on Si(111) substrates by plasma-assisted molecular beam epitaxy (PAMBE). The nucleation process of GaN-NWs has been investigated in terms of nucleation density and wire evolution with time for a given set of growth parameters. The wire density increases rapidly with time and then saturates. The growth period until the nucleation of new nanowires is terminated can be defined as the nucleation stage. Coalescence of closely spaced nanowires reduces the density… CONTINUE READING
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