Nucleation and growth of GaN nanorods on Si (111) surfaces by plasma-assisted molecular beam epitaxy - The influence of Si- and Mg-doping

@inproceedings{Furtmayr2008NucleationAG,
  title={Nucleation and growth of GaN nanorods on Si (111) surfaces by plasma-assisted molecular beam epitaxy - The influence of Si- and Mg-doping},
  author={Florian Furtmayr and Martin Vielemeyer and Martin Stutzmann and Jordi Arbiol and S{\`o}nia Estrad{\'e} and Francesca Peir{\'o} and Joan Ramon Morante and Martin Eickhoff},
  year={2008}
}
by plasma-assisted molecular beam epitaxy The influence of Siand Mg-doping Florian Furtmayr, Martin Vielemeyer, Martin Stutzmann, Jordi Arbiol, Sònia Estradé, Francesca Peirò, Joan Ramon Morante, and Martin Eickhoff Walter Schottky Institut, Technische Universität München, Am Coulombwall 3, 85748 Garching, Germany EME/CeRMAE/INUB, Departament d’Electrònica, Universitat de Barcelona, c/ Marti Franquès 1, E-08080 Barcelona, CAT, Spain TEM-MAT, Serveis Cientificotécnics, Universitat de Barcelona… CONTINUE READING

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