Nucleation, glide velocity and blocking of misfit dislocations in SiGe/Si

@article{Khler1998NucleationGV,
  title={Nucleation, glide velocity and blocking of misfit dislocations in SiGe/Si},
  author={R. K{\"o}hler and J. Pfeifer and H. Raidt and W. Neumann and P. Zaumseil and U. Richter},
  journal={Crystal Research and Technology},
  year={1998},
  volume={33},
  pages={593-604}
}
  • R. Köhler, J. Pfeifer, +3 authors U. Richter
  • Published 1998
  • Materials Science
  • Crystal Research and Technology
  • Relaxation of strained layer systems is still not well understood. It is time dependent and changes considerably for samples with different growth history. This has to be discussed in terms of nucleation, glide velocity and blocking of misfit dislocations. We have investigated these phenomena at samples with SiGe layer thicknesses ranging from 60 nm up to 120 nm grown by molecular beam epitaxy (MBE) or chemical vapor deposition (CVD) by means of X-ray topography. The samples were annealed at… CONTINUE READING
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