Novel thin film polymer foaming technique for low and ultra low-k dielectrics

@inproceedings{Krause2001NovelTF,
  title={Novel thin film polymer foaming technique for low and ultra low-k dielectrics},
  author={Bernd Dipl Ing Krause and Gerhard Koops and N.F.A. van der Vegt and Matthias Wessling and Michael Wuebbenhorst and J. M. Van Turnhout},
  year={2001}
}
As minimum device dimensions continue to shrink and on-chip device densities grow, signal distortion caused by capacitive coupling and crosstalk between the interconnections will increase. The current insulator material for on-chip applications is silicon dioxide (k= 3.9 4.2). The next generations of microchips require interlayer dielectrics with dielectric constants below 2.2 [I, 21. Although several high temperature resistant polymers have been synthesized recently [3], it seems that the… CONTINUE READING

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