Novel non-linear equivalent circuit extraction scheme for microwave field-effect transistors

Abstract

Non-linear equivalent circuits of microwave field-effect transistors (MESFET's, HEMT's) are now recognised to be of prime importance for the accurate design of microwave circuits, especially in monolithic technology. Many topologies have been proposed so far, together with extraction techniques [1-8]; recently, also some fundamental problems of physical… (More)

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