Novel metalorganic chemical vapor deposition system for GaN growth

@inproceedings{Nakamura1991NovelMC,
  title={Novel metalorganic chemical vapor deposition system for GaN growth},
  author={Shuji Nakamura and Yasuhiro Harada and Masayuki Seno},
  year={1991}
}
A novel metalorganic chemical vapor deposition (MOCVD) system, which has two different flows, has been developed. One flow carries a reactant gas parallel to the substrate, and the other an inactive gas perpendicular to the substrate for the purpose of changing the direction of the reactant gas flow. The growth of a GaN film was attempted using this system, and a high quality, uniform film was obtained over a 2 in. sapphire substrate. The carrier concentration and Hall mobility are 1×1018/cm3… CONTINUE READING

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