Novel low coherence metrology for nondestructive characterization of high-aspect-ratio microfabricated and micromachined structures

@inproceedings{Walecki2003NovelLC,
  title={Novel low coherence metrology for nondestructive characterization of high-aspect-ratio microfabricated and micromachined structures},
  author={Wojciech J. Walecki and Frank L. Wei and Phuc Van and Kevin Lai and Timothy Lee and Siew Hock Lau and Ann Koo},
  booktitle={SPIE MOEMS-MEMS},
  year={2003}
}
Novel nondestructive method based on low coherence optical interferometry for measurement of deep etched trenches in MEMs structures is presented. The proposed technique proves to provide very reproducible results and can be easily extended to metrology of other materials such as metals and dielectrics. We present results in real life semiconductor structures and discuss practical and fundamental limits of this technique 
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Non-contact fast wafer metrology for ultra-thin patterned wafers mounted on grinding and dicing tapes
  • W. Walecki, V. Suchkov, +5 authors A. Koo
  • Materials Science
  • IEEE/CPMT/SEMI 29th International Electronics Manufacturing Technology Symposium (IEEE Cat. No.04CH37585)
  • 2004
We present application of low coherence optical interferometry to measurement of highly warped samples(characterized by bow of up to 8mm and beyond on 300mm diameter wafers).
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We present design of novel tool for end point detection of wafer thickness, and wafer topography employing low coherence fiber optic interferometer, which optical length of the reference arm of theExpand
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We present novel fiber optics low coherence interferometer apparatus, and novel probe for in-situ characterization of semiconductor structures for IR detector manufacturing. Probe does not exhibitExpand
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