Novel large area joining technique for improved power device performance

@article{Schwarzbauer1989NovelLA,
  title={Novel large area joining technique for improved power device performance},
  author={H. Schwarzbauer and R. Kuhnert},
  journal={Conference Record of the IEEE Industry Applications Society Annual Meeting,},
  year={1989},
  pages={1348-1351 vol.2}
}
Conventional techniques for joining a silicon wafer to suitable substrates do not satisfy the demands of future power devices. Therefore, a low-temperature joining technique based on the principle of diffusion welding has been developed. The surfaces to be joined are metallized with Ag or Au, and the molybdenum substrate is coated with a thin layer of silver flakes. The parts to be joined are then sintered together at about 240 degrees C and a pressure of approximately 40 N/mm/sup 2/ within a… CONTINUE READING
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References

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A novel packaging technology for large area IC-power devices", paper presented at the So.Cal ISHM

R. Kuhnert, H. Schwarzbauer
1989

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