Novel high-yield trilayer resist process for 0.1 μm T-gate fabrication

@inproceedings{Wakita1995NovelHT,
  title={Novel high-yield trilayer resist process for 0.1 μm T-gate fabrication},
  author={Arlene Wakita and C.‐Y. Su and Hans Rohdin and H. Y. Liu and Augustine K. W. Lee and Jens Seeger and Virginia MacKay Robbins},
  year={1995}
}
By utilizing a novel ZEP/PMGI/ZEP trilayer resist process, GaInAs/AlInAs T‐gate modulation‐doped field effect transistors on InP with 0.1 μm gate lengths have been demonstrated. The trilayer resist requires only a single exposure. An overhang structure for liftoff, with a 0.1 μm footprint, is created by a sequence of infinitely selective developments for each layer. Linewidths as narrow as 65 nm have been obtained. Devices with a maximum current of 860 mA/mm, extrinsic transconductances of 658… CONTINUE READING

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