Novel high‐speed transistor based on charge emission from a quantum well

  title={Novel high‐speed transistor based on charge emission from a quantum well},
  author={Alex Kastalsky and A. A. Grinberg},
  journal={Applied Physics Letters},
A novel unipolar transistor employing properties of electrons confined in a single quantum well is proposed. The gate modulation of a charge density in the quantum well results in an exponentially strong variation of the output thermionic emission current to the collector. The device combines the attractive features of both bipolar and field‐effect transistors and provides a high speed (2–3 ps intrinsic delay time) with a large current drive (∼105 A/cm2) and high transconductances (1–10 S/mm). 
8 Citations

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  • S. Luryi
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    IEEE Electron Device Letters
  • 1985
A novel three-terminal device is proposed in which the base represents an undoped quantum well in a graded-gap heterostructure. The base conductivity is provided by a two-dimensional electron gas

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  • H. Grubin
  • Physics
    IEEE Journal of Quantum Electronics
  • 1979