Novel gate concept improves performance of light fired thyristor

A high voltage pilot-thyristor (4000 V) with amplifying gate, exhibiting light sensitivities of 1...2 mW under worst case condition is discussed. Since it must deliver large narrow base width pulses (e.g.50 A, 1...5 µs), differential turn-on delay between the two stages must be minimized. As shown by an infra-red recombination experiment, low enough a turn… CONTINUE READING